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| BB 857 Silicon Tuning Diode * For SAT-indoor-units * High capacitance ratio * Low series inductance * Low series resistance * Extremely small plastic SMD package * Excellent uniformity and matching due to "in-line" matching assembly procedure 2 1 VES05991 Type BB 857 BB 857 Marking Ordering Code O O Q62702-B0897 Q62702-B0893 unmatched inline matched Pin Configuration Package 1=C 2=A SCD-80 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage (R 5k) Forward current Operating temperature range Storage temperature Symbol Value 30 35 20 -55 ...+150 -55 ...+150 mA C Unit V VR VRM IF T op T stg Semiconductor Group Semiconductor Group 11 Mar-27-1998 1998-11-01 BB 857 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC characteristics Reverse current Symbol min. Values typ. max. 10 200 nA Unit IR IR - VR = 30 V Reverse current VR = 30 V, TA = 85 C AC characteristics Diode capacitance CT 6 0.45 6.6 0.55 0.54 12 12.2 1.5 0.6 7.2 0.65 5 - pF VR = 1 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 25 V, f = 1 MHz Capacitance ratio CT1/C T25 CT1/C T28 CT/C T 9.7 - - VR = 1 V, VR = 28 V, f = 1 MHz Capacitance ratio 1) % nH VR = 1 V, VR = 28 V, f = 1 MHz Series resistance rs Ls VR = 5 V, f = 470 MHz Series inductance 1) In-line matching. For details please refer to Application Note 047 Semiconductor Group Semiconductor Group 22 Mar-27-1998 1998-11-01 BB 857 Diode capacitance CT = f (V R) f = 1MHz 10 pF 8 CT 7 6 5 4 3 2 1 00 10 1 10 V VR Semiconductor Group Semiconductor Group 33 Mar-27-1998 1998-11-01 |
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